Datasheet ZXTP2012GTA - Diodes TRANSISTOR, PNP, SOT-223 — Ficha de datos

Diodes ZXTP2012GTA

Part Number: ZXTP2012GTA

Descripción detallada

Manufacturer: Diodes

Description: TRANSISTOR, PNP, SOT-223

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Docket:
ZXTP2012G
60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
SUMMARY BVCEO = -60V : RSAT = 39m ; IC = -5.5A DESCRIPTION
Packaged in the SOT223 outline this new low saturation 60V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.
FEATURES

Simulation ModelSimulation Model

Specifications:

  • Collector Emitter Voltage V(br)ceo: 80 V
  • Collector Emitter Voltage Vces: 25 mV
  • Current Ic Continuous a Max: 5 A
  • DC Collector Current: 5 A
  • DC Current Gain hFE: 250
  • Gain Bandwidth ft Typ: 120 MHz
  • Hfe Min: 100
  • Mounting Type: SMD
  • Number of Pins: 3
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: SOT-223
  • Power Dissipation Pd: 1.6 W
  • SVHC: No SVHC (15-Dec-2010)
  • Transistor Case Style: SOT-223
  • Transistor Polarity: PNP

RoHS: Yes

Accessories:

  • Electrolube - SMA10SL
  • Roth Elektronik - RE901
  • STANNOL - 631954