Datasheet ZXTN25012EFLTA - Diodes TRANSISTOR, NPN, SOT-23 — Ficha de datos

Descripción detallada

Manufacturer: Diodes

Description: TRANSISTOR, NPN, SOT-23

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Docket:
ZXTN25012EFL 12V, SOT23, NPN low power transistor
Summary
BVCEO > 12V BVECO > 4.5V hFE > 500 IC(cont) = 2A VCE(sat) < 65 mV @ 1A RCE(sat) = 46 m PD = 350mW
Description
Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents.

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 12 V
• Collector Emitter Voltage Vces: 130 mV
• Continuous Collector Current Ic Max: 2 A
• Current Ib: 500 mA
• Current Ic Continuous a Max: 5 A
• Current Ic hFE: 2 A
• DC Collector Current: 5 A
• DC Current Gain hFE: 800
• Gain Bandwidth ft Typ: 260 MHz
• Hfe Min: 370
• Mounting Type: SMD
• Number of Pins: 3
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-23
• Power Dissipation Pd: 350 mW
• Power Dissipation Ptot Max: 350 mW
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: SOT-23
• Transistor Polarity: NPN
• Turn Off Time: 72 ns
• Turn On Time: 70 ns
• Voltage Vcbo: 20 V

RoHS: Yes