Datasheet ZXTN2010GTA - Diodes TRANSISTOR, NPN, SOT-223 — Ficha de datos

Diodes ZXTN2010GTA

Part Number: ZXTN2010GTA

Descripción detallada

Manufacturer: Diodes

Description: TRANSISTOR, NPN, SOT-223

Docket:
ZXTN2010G
60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION
Packaged in the SOT223 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.
FEATURES

Simulation Model

Specifications:

Collector Emitter Voltage V(br)ceo: 80 V
Collector Emitter Voltage Vces: 30 mV
Current Ic Continuous a Max: 6 A
DC Collector Current: 6 A
DC Current Gain hFE: 200
Gain Bandwidth ft Typ: 130 MHz
Hfe Min: 100
Mounting Type: SMD
Number of Pins: 3
Operating Temperature Range: -55°C to +150°C
Package / Case: SOT-223
Power Dissipation Pd: 1.6 W
SVHC: No SVHC (15-Dec-2010)
Transistor Case Style: SOT-223
Transistor Polarity: NPN

RoHS: Yes