Datasheet FZT949 - Diodes TRANSISTOR, PNP, SOT-223 — Ficha de datos

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Manufacturer: Diodes

Description: TRANSISTOR, PNP, SOT-223

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Docket:
SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS
ISSUE 2 - NOVEMBER 1995 FEATURES * Extremely low equivalent on-resistance; RCE(sat) * 6 Amps continuous current * Up to 20 Amps peak current * Very low saturation voltage * Excellent hFE characteristics specified upto 20 Amps
FZT948 FZT949
C
E C

Manufacturer Catalogue

Docket:
Design Note 16 Issue 2 June 1995
Low Drop Out Linear Regulators
FZT949
+5V + 7.2 to 5.2V
Unreg.

input

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 30 V
• Collector Emitter Voltage Vces: -130 mV
• Continuous Collector Current Ic Max: 7 A
• Current Ic Continuous a Max: 7 A
• Current Ic hFE: 7 A
• DC Collector Current: 7 A
• DC Current Gain hFE: 200
• Full Power Rating Temperature: 25°C
• Gain Bandwidth ft Min: 80 MHz
• Gain Bandwidth ft Typ: 80 MHz
• Hfe Min: 75
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-223
• Power Dissipation Pd: 3 W
• Power Dissipation Ptot Max: 3 W
• Pulsed Current Icm: 20 A
• SMD Marking: FZT949
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: SOT-223
• Transistor Polarity: PNP
• Voltage Vcbo: 80 V

RoHS: Yes