Datasheet FZT792A - Diodes TRANSISTOR, PNP, SOT-223 — Ficha de datos

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Manufacturer: Diodes

Description: TRANSISTOR, PNP, SOT-223

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Docket:
SOT223 PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR
ISSUE 3 - NOVEMBER 1995 FEATURES * High gain and Very low saturation voltage APPLICATIONS * Battery powered circuits COMPLEMENTARY TYPE PARTMARKING DETAIL PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range FZT692B FZT792A SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg
FZT792A
C
E C B

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 70 V
• Collector Emitter Voltage Vces: 500 mV
• Continuous Collector Current Ic Max: 2 A
• Current Ic @ Vce Sat: 2 A
• Current Ic Continuous a Max: 2 A
• Current Ic hFE: 500 mA
• DC Collector Current: 2 A
• DC Current Gain hFE: 300
• Full Power Rating Temperature: 25°C
• Gain Bandwidth ft Min: 100 MHz
• Gain Bandwidth ft Typ: 160 MHz
• Hfe Min: 250
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-223
• Power Dissipation Pd: 2 W
• Power Dissipation Ptot Max: 2 W
• Pulsed Current Icm: 5 A
• SMD Marking: FZT792A
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: SOT-223
• Transistor Polarity: PNP
• Voltage Vcbo: 75 V

RoHS: Yes

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