Datasheet LMC660CN/NOPB - National Semiconductor IC, OP-AMP, 1.4 MHz, 1.1 V/µs, DIP-14 — Ficha de datos

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Manufacturer: National Semiconductor

Description: IC, OP-AMP, 1.4 MHz, 1.1 V/µs, DIP-14

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LMC660 CMOS Quad Operational Amplifier
June 2006
LMC660 CMOS Quad Operational Amplifier
General Description
The LMC660 CMOS Quad operational amplifier is ideal for operation from a single supply.

It operates from +5V to +15.5V and features rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input VOS, drift, and broadband noise as well as voltage gain into realistic loads (2 k and 600) are all equal to or better than widely accepted bipolar equivalents. This chip is built with National's advanced Double-Poly Silicon-Gate CMOS process. See the LMC662 datasheet for a dual CMOS operational amplifier with these same features. n n n n n n n n Low input offset voltage: 3 mV Low offset voltage drift: 1.3 µV/°C Ultra low input bias current: 2 fA Input common-mode range includes V- Operating range from +5V to +15.5V supply ISS = 375 µA/amplifier; inde

Specifications:

• Bandwidth: 1.4 MHz
• Number of Amplifiers: 4
• Number of Pins: 14
• Op Amp Type: High Gain
• Package / Case: DIP
• Slew Rate: 1.1 V/µs
• Supply Voltage Range: 5 V to 15.5 V

RoHS: Yes