Datasheet LMC662CN - National Semiconductor IC, OP AMP, DUAL CMOS, DIP8, 662 — Ficha de datos

National Semiconductor LMC662CN

Part Number: LMC662CN

Descripción detallada

Manufacturer: National Semiconductor

Description: IC, OP AMP, DUAL CMOS, DIP8, 662

Docket:
LMC662 CMOS Dual Operational Amplifier
April 2003
LMC662 CMOS Dual Operational Amplifier
General Description
The LMC662 CMOS Dual operational amplifier is ideal for operation from a single supply.

It operates from +5V to +15V and features rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input VOS, drift, and broadband noise as well as voltage gain into realistic loads (2 k and 600) are all equal to or better than widely accepted bipolar equivalents. This chip is built with National's advanced Double-Poly Silicon-Gate CMOS process. See the LMC660 datasheet for a Quad CMOS operational amplifier with these same features.

Simulation Model

Specifications:

Amplifier Type: CMOS
Bandwidth: 1.4 MHz
Base Number: 662
Device Marking: LMC662CN
Gain Bandwidth: 1.4 MHz
I/O Type: Rail-Rail Outputs
IC Generic Number: 662
Input Offset Voltage Max: 6.3 mV
Logic Function Number: 662
Mounting Type: Through Hole
Number of Amplifiers: 2
Number of Pins: 8
Op Amp Type: Low Input Bias
Operating Temperature Range: Commercial
Operational Amplifier Features: CMOS
Package / Case: DIP
SVHC: No SVHC (15-Dec-2010)
Slew Rate: 1.1 V/µs
Supply Voltage + Nom: 5 V
Supply Voltage Range: 4.75 V to 15.5 V

RoHS: Yes

Accessories:

Dow Corning - 2265931
Fischer Elektronik - ICK SMD A 8 SA
Fischer Elektronik - WLK 5
Multicomp - 2227MC-08-03-18-F1