Datasheet Texas Instruments INA217AIDWT — Ficha de datos
| Fabricante | Texas Instruments |
| Serie | INA217 |
| Numero de parte | INA217AIDWT |
Reemplazo de amplificador de instrumentación de bajo ruido y baja distorsión para SSM2017 16-SOIC -40 a 125
Hojas de datos
INA217 Low-Noise, Low-Distortion Instrumentation Amplifier Replacement for SSM2017 datasheet
PDF, 960 Kb, Revisión: C, Archivo publicado: abr 8, 2015
Extracto del documento
Precios
Estado
| Estado del ciclo de vida | Activo (Recomendado para nuevos diseños) |
| Disponibilidad de muestra del fabricante | Sí |
Embalaje
| Pin | 16 |
| Package Type | DW |
| Industry STD Term | SOIC |
| JEDEC Code | R-PDSO-G |
| Package QTY | 250 |
| Carrier | SMALL T&R |
| Device Marking | INA217 |
| Width (mm) | 7.5 |
| Length (mm) | 10.3 |
| Thickness (mm) | 2.35 |
| Pitch (mm) | 1.27 |
| Max Height (mm) | 2.65 |
| Mechanical Data | Descargar |
Paramétricos
| Bandwidth at Min Gain(Typ) | 3.4 MHz |
| CMRR(Min) | 100 dB |
| Gain Error (+/-)(Max) | 0.7 % |
| Gain Non-Linearity (+/-)(Max) | 0.0006 % |
| Gain(Max) | 10000 V/V |
| Gain(Min) | 1 V/V |
| Input Bias Current (+/-)(Max) | 12000 nA |
| Input Offset (+/-)(Max) | 250 uV |
| Input Offset Drift (+/-)(Max) | 1 uV/C |
| Iq(Typ) | 10 mA |
| Noise at 0.1 Hz - 10 Hz(Typ) | 2 uVpp |
| Noise at 1kHz(Typ)(nV/rt | 1.3 Hz |
| Number of Channels | 1 |
| Operating Temperature Range | -40 to 125,-40 to 85 C |
| Package Group | SOIC |
| Package Size: mm2:W x L | 16SOIC: 106 mm2: 10.3 x 10.3(SOIC) PKG |
| Rating | Catalog |
| Vs(Max) | 36 V |
| Vs(Min) | 9 V |
Plan ecológico
| RoHS | Obediente |
Linea modelo
Serie: INA217 (5)
- INA217AIDWR INA217AIDWT INA217AIDWTE4 INA217AIP INA217AIPG4
Clasificación del fabricante
- Semiconductors > Amplifiers > Instrumentation Amplifiers