Datasheet FMG2G75US60 - Fairchild IGBT MODULE, 600 V, 75 A — Ficha de datos

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Manufacturer: Fairchild

Description: IGBT MODULE, 600 V, 75 A

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Docket:
FMG2G75US60
September 2001
IGBT
FMG2G75US60
Molding Type Module

Specifications:

• Collector Emitter Voltage V(br)ceo: 600 V
• Collector Emitter Voltage Vces: 2.8 V
• Current Ic Continuous a Max: 75 A
• DC Collector Current: 75 A
• External Depth: 93 mm
• Fixing Centres: 80 mm
• Fixing Hole Diameter: 5.4 mm
• Mounting Type: Screw
• Number of Transistors: 2
• Operating Temperature Range: -40°C to +150°C
• Package / Case: 7PM-GA
• Pin Configuration: C2E1, E2, C1, G2, E2, E1, G1
• Power Dissipation Max: 310 W
• Power Dissipation Pd: 310 W
• Power Dissipation: 310 W
• Pulsed Current Icm: 150 A
• Rise Time: 40 ns
• Transistor Case Style: 7PM-GA
• Transistor Polarity: N Channel
• Transistor Type:
• Voltage Vces: 600 V

RoHS: Yes