Datasheet GA100XCP12-227 - Genesic Semiconductor IGBT SILICON CARBIDE (SiC) DIODE COPACK, 1200 V, 100 A, SOT-227 — Ficha de datos

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Manufacturer: Genesic Semiconductor

Description: IGBT SILICON CARBIDE (SiC) DIODE COPACK, 1200 V, 100 A, SOT-227

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Specifications:

• Collector Emitter Voltage Vces: 1200 V
• DC Collector Current: 100 A
• Number of Pins: 3
• Operating Temperature Range: -40°C to +150°C
• Transistor Type: IGBT
• RoHS: Yes

Otros nombres:

GA100XCP12227, GA100XCP12 227