Datasheet FP25R12W2T4_B11 - Infineon IGBT, LOW POW, 1200 V, 25 A, EASYPIM — Ficha de datos

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Manufacturer: Infineon

Description: IGBT, LOW POW, 1200 V, 25 A, EASYPIM

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Docket:
Technische Information / technical information
IGBT-Module IGBT-modules
EasyPIMTM2B Modul PressFIT mit Trench/Feldstopp IGBT4 und Emitter Controlled4 Diode EasyPIMTM2B module PressFIT with trench/fieldstop IGBT4 and Emitter Controlled4 Diode
FP25R12W2T4_B11
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Specifications:

• Collector Emitter Voltage V(br)ceo: 1.2 kV
• Collector Emitter Voltage Vces: 1.85 V
• DC Collector Current: 25 A
• Number of Pins: 23
• Operating Temperature Range: -40°C to +150°C
• Power Dissipation Max: 175 W
• Transistor Case Style: Module
• Transistor Polarity: N Channel

RoHS: Yes