Datasheet DF1000R17IE4 - Infineon IGBT, HI PO CHOP, 1700 V, 1000 A, PRIM — Ficha de datos

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Manufacturer: Infineon

Description: IGBT, HI PO CHOP, 1700 V, 1000 A, PRIM

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Docket:
Technische Information / technical information
IGBT-Module IGBT-modules
DF1000R17IE4
PrimePACKTM3 Modul und NTC PrimePACKTM3 module and NTC
! " # $ %

Specifications:

• Collector Emitter Voltage V(br)ceo: 1.7 kV
• Collector Emitter Voltage Vces: 2 V
• DC Collector Current: 1000 A
• Module Configuration: Single
• Number of Pins: 12
• Operating Temperature Range: -40°C to +150°C
• Power Dissipation Max: 6.25 kW
• Transistor Case Style: Module
• Transistor Polarity: N Channel

RoHS: Yes

Accessories:

• DAVICO - D 25-10
• TE Connectivity - 0-0160170-0