Datasheet IGP03N120H2 - Infineon IGBT, N, 1200 V, 3.9 A, TO-220 — Ficha de datos

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Manufacturer: Infineon

Description: IGBT, N, 1200 V, 3.9 A, TO-220

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Docket:
IGP03N120H2 IGW03N120H2
HighSpeed 2-Technology
C
·
Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A

Specifications:

• Collector Emitter Voltage V(br)ceo: 1.2kV
• Collector Emitter Voltage Vces: 2.8 V
• Current Ic Continuous a Max: 3.9 A
• DC Collector Current: 9.6 A
• Number of Pins: 3
• Number of Transistors: 1
• Operating Temperature Range: -40°C to +150°C
• Package / Case: TO-220
• Power Dissipation Max: 62.5 W
• Power Dissipation: 62.5 W
• Termination Type: Through Hole
• Transistor Case Style: TO-220
• Transistor Polarity: N Channel
• Transistor Type:
• Voltage Vces: 1.2kV

RoHS: Yes