Datasheet IGD01N120H2 - Infineon IGBT, N, 1200 V, 1.3 A, D-PAK — Ficha de datos

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Manufacturer: Infineon

Description: IGBT, N, 1200 V, 1.3 A, D-PAK

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Docket:
IGP01N120H2 IGD01N120H2
HighSpeed 2-Technology
C
·
Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =1A

Specifications:

• Collector Emitter Voltage V(br)ceo: 1.2kV
• Collector Emitter Voltage Vces: 2.8 V
• Current Ic Continuous a Max: 1.3 A
• DC Collector Current: 3.2 A
• Number of Pins: 3
• Number of Transistors: 1
• Operating Temperature Range: -40°C to +150°C
• Package / Case: D-PAK
• Power Dissipation Max: 28 W
• Power Dissipation: 28 W
• Termination Type: SMD
• Transistor Case Style: D-PAK
• Transistor Polarity: N Channel
• Transistor Type:
• Voltage Vces: 1.2kV

RoHS: Yes

Accessories:

• Fischer Elektronik - WLPG 02