Datasheet IKW30N60H3 - Infineon IGBT+ DIODE, 600 V, 20 A, TO247 — Ficha de datos
Part Number: IKW30N60H3
Descripción detallada
Manufacturer: Infineon
Description: IGBT+ DIODE, 600 V, 20 A, TO247
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Specifications:
- Transistor Type: IGBT
- DC Collector Current: 30 A
- Collector Emitter Voltage Vces: 2.4 V
- Power Dissipation Max: 187 W
- Collector Emitter Voltage V(br)ceo: 600 V
- Operating Temperature Range: -40°C to +175°C
- Transistor Case Style: TO-247
- Number of Pins: 3
RoHS: Yes
Accessories:
- Fischer Elektronik - THFU 2