Datasheet IKB10N60T - Infineon IGBT+ DIODE,600V,10A,TO263 — Ficha de datos

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Manufacturer: Infineon

Description: IGBT+ DIODE,600V,10A,TO263

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Docket:
TrenchStop® Series
IKB10N60T p
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon 3 diode
C
· · · · · · · · · · ·

Specifications:

• Transistor Type: IGBT
• DC Collector Current: 10 A
• Collector Emitter Voltage Vces: 2.05 V
• Power Dissipation Max: 110 W
• Collector Emitter Voltage V(br)ceo: 600 V
• Operating Temperature Range: -40°C to +175°C
• Transistor Case Style: TO-263
• Number of Pins: 3

RoHS: Yes

Accessories:

• Fairchild - FSAM10SH60A