Datasheet IKB06N60T - Infineon IGBT+ DIODE,600V,6A,TO263 — Ficha de datos

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Manufacturer: Infineon

Description: IGBT+ DIODE,600V,6A,TO263

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Docket:
TrenchStop series
®
IKB06N60T p
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon 3 diode
· · · · Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time ­ 5µs Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners ® · TrenchStop and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed · Low EMI 1 · Qualified according to JEDEC for target applications · Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600V IC;Tc=100°C VCE(sat),Tj=25°C 6A 1.5V Tj,max 175°C Marking K06T60 Package PG-TO-263-3-2

Specifications:

• Transistor Type: IGBT
• DC Collector Current: 6 A
• Collector Emitter Voltage Vces: 2.05 V
• Power Dissipation Max: 88 W
• Collector Emitter Voltage V(br)ceo: 600 V
• Operating Temperature Range: -40°C to +175°C
• Transistor Case Style: TO-263
• Number of Pins: 3

RoHS: Yes