Datasheet IHW40T60 - Infineon IGBT+ DIODE,600V,40A,TO247 — Ficha de datos

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Manufacturer: Infineon

Description: IGBT+ DIODE,600V,40A,TO247

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Docket:
TrenchStop® Series
IHW40T60 q
Low Loss DuoPack : IGBT in TrenchStop®-technology with soft, fast recovery anti-parallel EmCon HE diode
Features: · Very low VCE(sat) 1.5 V (typ.) · Maximum junction temperature 175 °C · Short circuit withstand time ­ 5µs · Trench and fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCE(sat) and positive temperature coefficient · Low EMI · Low gate charge · Qualified according to JEDEC1 for target applications · Pb-free lead plating; RoHS compliant · Complete product spectrum and PSpice models : http://www.infineon.com/igbt/ Applications: · Inductive Cooking · Soft & Hard Switching Applications Type IHW40T60 VCE 600V IC 40A VCE(sat),Tj=25°C 1.55V Tj,max 175°C Marking H40T60B Package PG-TO-247-3
C

Specifications:

• Transistor Type: IGBT
• DC Collector Current: 40 A
• Collector Emitter Voltage Vces: 2.05 V
• Power Dissipation Max: 303 W
• Collector Emitter Voltage V(br)ceo: 600 V
• Operating Temperature Range: -40°C to +175°C
• Transistor Case Style: TO-247
• Number of Pins: 3

RoHS: Yes

Accessories:

• Fischer Elektronik - THFU 2