Datasheet HGTG12N60C3D - Fairchild IGBT, N, 3-TO-247 — Ficha de datos

Fairchild HGTG12N60C3D

Part Number: HGTG12N60C3D

Descripción detallada

Manufacturer: Fairchild

Description: IGBT, N, 3-TO-247

Docket:
HGTG12N60C3D
Data Sheet December 2001
24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.

The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in anti parallel with the IGBT is the development type TA49061. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential. Formerly Developmental Type TA49117.
Features

Specifications:

Transistor Type: IGBT
DC Collector Current: 24 A
Collector Emitter Voltage Vces: 2 V
Power Dissipation Max: 104 W
Collector Emitter Voltage V(br)ceo: 600 V
Transistor Case Style: TO-247
Number of Pins: 3
Current Ic Continuous a Max: 24 A
Package / Case: TO-247
Power Dissipation: 104 W
Termination Type: Through Hole
Transistor Polarity: N Channel
Voltage Vces: 600 V

RoHS: Yes

Accessories:

Fischer Elektronik - WLK 5
Fischer Elektronik - WLPG 02