Datasheet GT15Q102 - Toshiba IGBT, 1200 V, TO-3P(N) — Ficha de datos
Part Number: GT15Q102
Descripción detallada
Manufacturer: Toshiba
Description: IGBT, 1200 V, TO-3P(N)
Docket:
GT15Q102
Preliminary
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT15Q102
High Power Switching Applications
Specifications:
- Transistor Type: IGBT
- DC Collector Current: 15 A
- Collector Emitter Voltage Vces: 2.7 V
- Power Dissipation Max: 170 W
- Collector Emitter Voltage V(br)ceo: 1200 V
- Operating Temperature Range: -55°C to +150°C
- Transistor Case Style: TO-3P (N)
- Number of Pins: 3
- Current Ic Continuous a Max: 15 A
- Package / Case: TO-3P (N)
- Pin Format: GCE
- Power Dissipation: 170 W
- Power Dissipation Pd: 170 W
- Pulsed Current Icm: 30 A
- Rise Time: 50 ns
- Termination Type: Through Hole
- Transistor Polarity: N Channel
- Voltage Vces: 1200 V
RoHS: Yes
Accessories:
- Fischer Elektronik - TF 3 2
- Fischer Elektronik - WLK 5