Datasheet IKP03N120H2 - Infineon IGBT, N, 1200 V, 3.9 A, TO-220 — Ficha de datos

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Manufacturer: Infineon

Description: IGBT, N, 1200 V, 3.9 A, TO-220

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Docket:
IKP03N120H2 IKW03N120H2
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
C
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Designed for: - SMPS - Lamp Ballast - ZVS-Converter 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A Qualified according to JEDEC for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 1200V 1200V IC 3A 3A Eoff 0.15mJ 0.15mJ Tj 150°C 150°C Marking K03H1202 K03H1202 Package PG-TO-247-3-21 PG-TO-220-3-1

Specifications:

• Transistor Type: IGBT
• DC Collector Current: 9.6 A
• Collector Emitter Voltage Vces: 2.8 V
• Power Dissipation Max: 62.5 W
• Collector Emitter Voltage V(br)ceo: 1200 V
• Operating Temperature Range: -40°C to +150°C
• Transistor Case Style: TO-220
• Current Ic Continuous a Max: 3.9 A
• Number of Transistors: 1
• Package / Case: TO-220
• Power Dissipation: 62.5 W
• Termination Type: Through Hole
• Transistor Polarity: N Channel
• Voltage Vces: 1200 V

RoHS: Yes

Accessories:

• Fischer Elektronik - WLK 5