Datasheet HGTP20N60A4 - Fairchild IGBT, N, TO-220 — Ficha de datos

Fairchild HGTP20N60A4

Part Number: HGTP20N60A4

Descripción detallada

Manufacturer: Fairchild

Description: IGBT, N, TO-220

Docket:
HGTG20N60A4, HGTP20N60A4
Data Sheet December 2001
600V, SMPS Series N-Channel IGBTs
The HGTG20N60A4 and HGTP20N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.

These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49339.
Features

Specifications:

Transistor Type: IGBT
DC Collector Current: 70 A
Collector Emitter Voltage Vces: 2.7 V
Power Dissipation Max: 290 W
Collector Emitter Voltage V(br)ceo: 600 V
Transistor Case Style: TO-220AB
Number of Pins: 3
SVHC: No SVHC (18-Jun-2010)
Current Ic Continuous a Max: 70 A
Current Temperature: 25°C
Fall Time tf: 32 ns
Full Power Rating Temperature: 25°C
Number of Transistors: 1
Package / Case: TO-220AB
Pin Format: GCE
Power Dissipation: 290 W
Power Dissipation Pd: 290 W
Power Dissipation Ptot Max: 290 W
Pulsed Current Icm: 280 A
Rise Time: 12 ns
SVHC (Secondary): Bis (2-ethyl(hexyl)phthalate) (DEHP) (18-Jun-2010)
Termination Type: Through Hole
Transistor Polarity: N
Voltage Vces: 600 V

RoHS: Yes

Accessories:

Fischer Elektronik - WLK 5