Datasheet HGTG18N120BND - Fairchild IGBT, N, TO-247 — Ficha de datos

Fairchild HGTG18N120BND

Part Number: HGTG18N120BND

Descripción detallada

Manufacturer: Fairchild

Description: IGBT, N, TO-247

Docket:
HGTG18N120BND
Data Sheet March 2007
54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG18N120BND is a Non-Punch Through (NPT) IGBT design.

This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49304.
Features

Specifications:

Transistor Type: IGBT
DC Collector Current: 54 A
Collector Emitter Voltage Vces: 2.7 V
Power Dissipation Max: 390 W
Collector Emitter Voltage V(br)ceo: 1200 V
Transistor Case Style: TO-247
Number of Pins: 3
SVHC: No SVHC (18-Jun-2010)
Alternate Case Style: SOT-249
Current Ic @ Vce Sat: 18 A
Current Ic Continuous a Max: 54 A
Device Marking: HGTG18N120BND
Package / Case: TO-247
Power Dissipation: 390 W
Power Dissipation Pd: 390 W
Pulsed Current Icm: 160 A
Rise Time: 22 ns
SVHC (Secondary): Bis (2-ethyl(hexyl)phthalate) (DEHP) (18-Jun-2010)
Termination Type: Through Hole
Transistor Polarity: N
Voltage Vces: 1200 V

RoHS: Yes

Accessories:

Fischer Elektronik - WLK 5