Datasheet IRG4BC30FPBF - International Rectifier IGBT, TO-220 — Ficha de datos

Descripción detallada

Manufacturer: International Rectifier

Description: IGBT, TO-220

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Docket:
PD -95651A
IRG4BC30FPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).

Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-220AB package Lead-Free

Simulation Model

Specifications:

• Transistor Type: IGBT
• DC Collector Current: 31 A
• Collector Emitter Voltage Vces: 1.9 V
• Power Dissipation Max: 100 W
• Collector Emitter Voltage V(br)ceo: 600 V
• Transistor Case Style: TO-220
• Number of Pins: 3
• Current Ic Continuous a Max: 31 A
• Current Temperature: 25°C
• Fall Time Max: 180 ns
• Full Power Rating Temperature: 25°C
• Number of Transistors: 1
• Package / Case: TO-220
• Power Dissipation: 100 W
• Power Dissipation Pd: 100 W
• Pulsed Current Icm: 120 A
• Rise Time: 15 ns
• Termination Type: Through Hole
• Transistor Polarity: N Channel
• Voltage Vces: 600 V

RoHS: Yes

Accessories:

• Fischer Elektronik - WLK 5