Datasheet IRG4RC10KPBF - International Rectifier IGBT, D-PAK — Ficha de datos

Descripción detallada

Manufacturer: International Rectifier

Description: IGBT, D-PAK

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Docket:
PD 95389
IRG4RC10KPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
· Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V · Generation 4 IGBT design provides higher efficiency than Generation 3 · Industry standard TO-252AA package · Lead-Free

Simulation Model

Specifications:

• Transistor Type: IGBT
• DC Collector Current: 9 A
• Collector Emitter Voltage Vces: 2.62 V
• Power Dissipation Max: 38 W
• Collector Emitter Voltage V(br)ceo: 600 V
• Transistor Case Style: D-PAK
• Number of Pins: 3
• Current Ic Continuous a Max: 9 A
• Current Temperature: 25°C
• Fall Time Max: 290 ns
• Full Power Rating Temperature: 25°C
• Number of Transistors: 1
• Package / Case: D-PAK
• Power Dissipation: 38 W
• Power Dissipation Pd: 38 W
• Pulsed Current Icm: 18 A
• Rise Time: 24 ns
• Short Circuit Withstand Time Min: 10Вµs
• Termination Type: SMD
• Transistor Polarity: N Channel
• Voltage Vces: 600 V

RoHS: Y-Ex

Accessories:

• Fischer Elektronik - WLK 5
• Fischer Elektronik - WLPG 02