Datasheet IXGA30N60C3C1 - IXYS IGBT,600V,30A,TO-263 — Ficha de datos

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Manufacturer: IXYS

Description: IGBT,600V,30A,TO-263

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Docket:
Preliminary Technical Information
GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode
IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1
VCES IC110 VCE(sat) tfi(typ)
= = =

Specifications:

• Transistor Type: IGBT
• DC Collector Current: 60 A
• Collector Emitter Voltage Vces: 3 V
• Power Dissipation Max: 220 W
• Collector Emitter Voltage V(br)ceo: 600 V
• Operating Temperature Range: -55°C to +150°C
• Transistor Case Style: TO-263
• Number of Pins: 3

RoHS: Yes