Datasheet STGB3NB60SDT4 - STMicroelectronics IGBT, SMD, 600 V, 3 A, D2-PAK — Ficha de datos
Part Number: STGB3NB60SDT4
Descripción detallada
Manufacturer: STMicroelectronics
Description: IGBT, SMD, 600 V, 3 A, D2-PAK
Docket:
STGB3NB60SD
N-CHANNEL 3A - 600V D2PAK Power MESHTM IGBT
TYPE STGB3NB60SD
s
VCES 600 V
Specifications:
- Transistor Type: IGBT
- DC Collector Current: 6 A
- Collector Emitter Voltage Vces: 1.5 V
- Power Dissipation Max: 70 W
- Collector Emitter Voltage V(br)ceo: 600 V
- Operating Temperature Range: -60°C to +175°C
- Transistor Case Style: D2-PAK
- Number of Pins: 3
- Current Ic Continuous a Max: 6 A
- Fall Time tf: 720 ns
- Package / Case: D2-PAK
- Power Dissipation: 70 W
- Pulsed Current Icm: 25 A
- Rise Time: 150 ns
- Termination Type: SMD
- Transistor Polarity: N Channel
- Voltage Vces: 600 V
RoHS: Yes
Accessories:
- Fischer Elektronik - WLK 5
- Fischer Elektronik - WLPG 02