Datasheet STGB10NC60KDT4 - STMicroelectronics IGBT, SMD, 600 V, 10 A, D2-PAK — Ficha de datos

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Manufacturer: STMicroelectronics

Description: IGBT, SMD, 600 V, 10 A, D2-PAK

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Docket:
STGB10NC60KD, STGD10NC60KD STGF10NC60KD, STGP10NC60KD
10 A, 600 V short-circuit rugged IGBT
Features
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3

Specifications:

• Collector Emitter Voltage V(br)ceo: 600 V
• Collector Emitter Voltage Vces: 2.5 V
• Current Ic Continuous a Max: 20 A
• DC Collector Current: 20 A
• Fall Time tf: 82 ns
• Mounting Type: SMD
• Number of Pins: 3
• Operating Temperature Range: -55°C to +150°C
• Package / Case: D2-PAK
• Power Dissipation Max: 60 W
• Power Dissipation: 60 W
• Pulsed Current Icm: 30 A
• Rise Time: 6 ns
• SVHC: No SVHC (20-Jun-2011)
• Transistor Case Style: D2-PAK
• Transistor Polarity: N Channel
• Transistor Type: IGBT
• Voltage Vces: 600 V

RoHS: Yes