Datasheet STGB10NC60HDT4 - STMicroelectronics IGBT, N 600 V 10 A DВІPAK — Ficha de datos

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Manufacturer: STMicroelectronics

Description: IGBT, N 600 V 10 A DВІPAK

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Docket:
STGB10NC60HD - STGD10NC60HD STGF10NC60HD - STGP10NC60HD
600 V - 10 A - very fast IGBT
Features
Low on-voltage drop (VCE(sat)) Low CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode
3 1

Specifications:

• Collector Emitter Voltage V(br)ceo: 600 V
• Collector Emitter Voltage Vces: 2.5 V
• Current Ic Continuous a Max: 10 A
• DC Collector Current: 20 A
• Mounting Type: SMD
• Number of Pins: 3
• Operating Temperature Range: -55°C to +150°C
• Package / Case: D2-PAK
• Power Dissipation Max: 65 W
• Power Dissipation: 65 W
• Pulsed Current Icm: 40 A
• Rise Time: 5 ns
• SVHC: No SVHC (20-Jun-2011)
• Transistor Case Style: D2-PAK
• Transistor Polarity: N Channel
• Transistor Type: IGBT
• Voltage Vces: 600 V

RoHS: Yes