Datasheet SKW20N60 - Infineon IGBT, FAST — Ficha de datos

Infineon SKW20N60

Part Number: SKW20N60

Descripción detallada

Manufacturer: Infineon

Description: IGBT, FAST

Docket:
SKW20N60
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
· 75% lower Eoff compared to previous generation combined with low conduction losses · Short circuit withstand time 10 µs · Designed for: - Motor controls - Inverter · NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability · Very soft, fast recovery anti-parallel EmCon diode
C
G

Specifications:

Transistor Type: IGBT
DC Collector Current: 40 A
Collector Emitter Voltage Vces: 2.4 V
Power Dissipation Max: 179 W
Collector Emitter Voltage V(br)ceo: 600 V
Transistor Case Style: TO-247
Number of Pins: 3
Current Ic @ Vce Sat: 20 A
Current Ic Continuous a Max: 40 A
Current Temperature: 25В°C
Device Marking: SKW20N60
Fall Time tf: 65 ns
Full Power Rating Temperature: 25В°C
Junction Temperature Tj Max: 150В°C
Junction Temperature Tj Min: -55В°C
Lead Spacing: 2.54 mm
Number of Transistors: 1
Package / Case: TO-247
Pin Format: 1 g, 2C, 3E
Power Dissipation: 179 W
Power Dissipation Pd: 179 W
Power Dissipation Ptot Max: 179 W
Pulsed Current Icm: 80 A
Rise Time: 36 ns
Termination Type: Through Hole
Transistor Polarity: N
Voltage Vces: 600 V

RoHS: Yes

Accessories:

Fischer Elektronik - WLK 5