Datasheet SGW30N60 - Infineon IGBT, FAST — Ficha de datos
Part Number: SGW30N60
Descripción detallada
Manufacturer: Infineon
Description: IGBT, FAST
Specifications:
- Transistor Type: IGBT
- DC Collector Current: 41 A
- Collector Emitter Voltage Vces: 2.4 V
- Power Dissipation Max: 250 W
- Collector Emitter Voltage V(br)ceo: 600 V
- Operating Temperature Range: -55°C to +150°C
- Transistor Case Style: TO-247AC
- Number of Pins: 3
- Current Ic @ Vce Sat: 30 A
- Current Ic Continuous a Max: 41 A
- Current Temperature: 25°C
- Device Marking: SGW30N60
- Fall Time tf: 70 ns
- Full Power Rating Temperature: 25°C
- Junction Temperature Tj Max: 150°C
- Junction Temperature Tj Min: -55°C
- Package / Case: TO-247AC
- Power Dissipation: 250 W
- Power Dissipation Pd: 250 W
- Power Dissipation Ptot Max: 250 W
- Pulsed Current Icm: 112 A
- Rise Time: 35 ns
- Termination Type: Through Hole
- Transistor Polarity: N
- Voltage Vces: 600 V
RoHS: Yes
Accessories:
- Fischer Elektronik - WLK 5