Datasheet IXGR50N60B2D1 - IXYS IGBT, ISOPLUS247 — Ficha de datos
Part Number: IXGR50N60B2D1
Descripción detallada
Manufacturer: IXYS
Description: IGBT, ISOPLUS247
Docket:
HiPerFASTTM IGBT ISOPLUS247TM
B2-Class High Speed IGBTs
IXGR 50N60B2 IXGR 50N60B2D1
(Electrically Isolated Back Surface)
Preliminary Data Sheet
Specifications:
- Transistor Type: IGBT
- DC Collector Current: 68 A
- Collector Emitter Voltage Vces: 2.2 V
- Power Dissipation Max: 200 W
- Collector Emitter Voltage V(br)ceo: 600 V
- Operating Temperature Range: -55°C to +150°C
- Transistor Case Style: ISOPLUS-247
- Current Ic Continuous a Max: 60 A
- Fall Time tf: 65 ns
- Junction to Case Thermal Resistance A: 0.6°C/W
- Package / Case: ISOPLUS-247
- Pin Configuration: Copack (FRD)
- Power Dissipation: 200 W
- Rise Time: 65 ns
- Termination Type: Through Hole
- Transistor Polarity: NPN
- Voltage Vces: 600 V
RoHS: Yes