Composite Transistors XN6537
Silicon NPN epitaxial planer transistor
Unit: mm For wide-band low-noise amplification +0.2 2.8 –0.3 +0.25 3 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage
Rating
Emitter to base voltage
of
element Collector current VCEO 12 V VEBO 2.5 V IC 30 mA Peak collector current ICP 50 mA Total power dissipation PT 300 mW Overall Junction temperature Tj 150 ˚C Tstg –55 to +150 ˚C Storage temperature 1 : Collector (Tr1)
2 : Base (Tr1)
3 : Collector (Tr2) ■ Electrical Characteristics
Parameter 4 : Base (Tr2)
5 : Emitter (Tr2)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin) Marking Symbol: 7H
Internal Connection
6 Tr1 1
2 5
4 *1 +0.1 +0.1 0 to 0.05 0.4±0.2 ■ Absolute Maximum Ratings 1.45±0.1 +0.1 4 0.1 to 0.3 Parameter 0.5 –0.05 0.95 2 0.16–0.06 2SC3110 × 2 elements 5 0.95 +0.2 2.9 –0.05
1.1–0.1 ● +0.2 ■ Basic Part Number of Element 1.9±0.1 Two elements incorporated into one package.
Reduction of the mounting area and assembly cost by one half. 0.8 ● 0.65±0.15
1 6 ■ Features
● 1.5 –0.05 0.3 –0.05 0.65±0.15 Tr2 3 (Ta=25˚C)
Symbol Conditions min Collector cutoff current ICBO VCB = 10V, IE = 0 Emitter cutoff current IEBO VEB = 2V, IC = 0 Forward current transfer ratio hFE VCE = 10V, IC = 10mA 40 Forward current transfer hFE ratio hFE (small/large)*1 VCE = 10V, IC = 10mA 0.5 Transition frequency fT VCE = 10V, IC = 10mA, f = 200MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz Forward transfer gain | S21e |2 VCE = 10V, IC = 20mA, f = 0.8GHz typ max Unit 100 nA 1 µA 0.99 …