Datasheet IKP04N60T - Infineon IGBT, N, 600 V, 4 A, TO-220 — Ficha de datos
Part Number: IKP04N60T
Descripción detallada
Manufacturer: Infineon
Description: IGBT, N, 600 V, 4 A, TO-220
Docket:
TrenchStop® Series
IKP04N60T q
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
· · · · · Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time 5µs Designed for : - Frequency Converters - Drives ® TrenchStop and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed - low VCE(sat) Positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Very soft, fast recovery anti-parallel EmCon HE diode 1 Qualified according to JEDEC for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600 V IC 4A VCE(sat),Tj=25°C 1.5 V Tj,max 175 °C Marking K04T60 Package PG-TO-220-3-1
C
Specifications:
- Transistor Type: IGBT
- Max Voltage Vce Sat: 2.05 V
- Collector-to-Emitter Breakdown Voltage: 600 V
- Transistor Case Style: TO-220
- Case Style: TO-220
- Max Current Ic Continuous a: 4 A
- Number of Transistors: 1
- Power Dissipation: 42 W
- Termination Type: Through Hole
- Transistor Polarity: N
- Voltage Vces: 600 V
RoHS: Yes
Accessories:
- Fischer Elektronik - WLK 5