Datasheet HGT1S20N60A4S9A - Fairchild IGBT, D2-PAK, 600 V — Ficha de datos

Fairchild HGT1S20N60A4S9A

Part Number: HGT1S20N60A4S9A

Descripción detallada

Manufacturer: Fairchild

Description: IGBT, D2-PAK, 600 V

Docket:
HGT1S20N60A4S9A
Data Sheet March 2006
600V, SMPS Series N-Channel IGBTs
The HGT1S20N60A4S9A is MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.

These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49339.
Features

Specifications:

Transistor Type: IGBT
DC Collector Current: 70 A
Max Voltage Vce Sat: 2.7 V
Max Power Dissipation: 290 W
Collector-to-Emitter Breakdown Voltage: 600 V
Operating Temperature Range: -55°C to +150°C
Transistor Case Style: D2-PAK
Number of Pins: 3
SVHC: No SVHC (18-Jun-2010)
Alternate Case Style: TO-263
Case Style: D2-PAK
Current Ic @ Vce Sat: 20 A
Current Temperature: 25°C
Fall Time Tf: 32 ns
Full Power Rating Temperature: 25°C
Junction to Case Thermal Resistance A: 0.43°C/W
Max Current Ic Continuous a: 70 A
Max Junction Temperature Tj: 150°C
Min Junction Temperature, Tj: -55°C
Number of Transistors: 1
Power Dissipation: 290 W
Power Dissipation Pd: 290 W
Pulsed Current Icm: 280 A
Rise Time: 12 ns
SVHC (Secondary): Bis (2-ethyl(hexyl)phthalate) (DEHP) (18-Jun-2010)
Termination Type: SMD
Transistor Polarity: N Channel
Voltage Vces: 600 V

RoHS: Y-Ex

Accessories:

Fischer Elektronik - WLK 5
Fischer Elektronik - WLPG 02