Datasheet GT15J321 - Toshiba IGBT, 600 V, TO-220NIS — Ficha de datos

Toshiba GT15J321

Part Number: GT15J321

Descripción detallada

Manufacturer: Toshiba

Description: IGBT, 600 V, TO-220NIS

Docket:
GT15J321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT15J321
High Power Switching Applications Fast Switching Applications
· · · · · · The 4th generation FS (fast switching) Enhancement-mode High speed: tf = 0.03 µs (typ.) Low saturation Voltage: VCE (sat) = 1.90 V (typ.) FRD included between emitter and collector.

Unit: mm

Specifications:

Transistor Type: IGBT
Max Voltage Vce Sat: 2.45 V
Collector-to-Emitter Breakdown Voltage: 600 V
Transistor Case Style: TO-220NIS
Case Style: TO-220NIS
Junction to Case Thermal Resistance A: 4.16°C/W
Max Current Ic Continuous a: 15 A
Max Fall Time: 150 ns
Max Junction Temperature Tj: 150°C
Power Dissipation: 30 W
Power Dissipation Pd: 30 W
Pulsed Current Icm: 30 A
Rise Time: 40 ns
Termination Type: Through Hole
Transistor Polarity: N
Typ Fall Time: 30 ns
Voltage Vces: 600 V

RoHS: Yes

Accessories:

Fischer Elektronik - WLPG 02