Datasheet HGTP12N60A4D - Intersil IGBT, TO-220 — Ficha de datos

Intersil HGTP12N60A4D

Part Number: HGTP12N60A4D

Descripción detallada

Manufacturer: Intersil

Description: IGBT, TO-220

Docket:
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
Data Sheet November 1999 File Number 4697.3
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.

These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49335. The diode used in anti-parallel is the development type TA49371. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49337.
Features

Specifications:

Transistor Type: IGBT
Max Voltage Vce Sat: 2.7 V
Collector-to-Emitter Breakdown Voltage: 600 V
Transistor Case Style: TO-220
Number of Pins: 3
SVHC: Cobalt dichloride (18-Jun-2010)
Case Style: TO-220
Fall Time Tf: 18 ns
Full Power Rating Temperature: 25°C
Max Current Ic Continuous a: 54 A
Number of Transistors: 1
Power Dissipation: 167 W
Power Dissipation Pd: 167 W
Pulsed Current Icm: 96 A
Rise Time: 8 ns
SVHC (Secondary): Bis (2-ethyl(hexyl)phthalate) (DEHP) (18-Jun-2010)
Transistor Polarity: N

Accessories:

Fischer Elektronik - SK 145/37,5 STS-220
Fischer Elektronik - SK 409/25,4 STS
Fischer Elektronik - SK 409/50,8 STS
Fischer Elektronik - WLK 5