Datasheet GA200SA60SPBF - International Rectifier IGBT, SOT-227 TUBE 10 — Ficha de datos
Part Number: GA200SA60SPBF
Descripción detallada
Manufacturer: International Rectifier
Description: IGBT, SOT-227 TUBE 10
Docket:
PD- 50070A
/) 5)$5
INSULATED GATE BIPOLAR TRANSISTOR
Features
· Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz · Lowest conduction losses available · Fully isolated package ( 2,500 volt AC) · Very low internal inductance ( 5 nH typ.) · Industry standard outline
Specifications:
- Transistor Type: IGBT
- Max Voltage Vce Sat: 1.1 V
- Collector-to-Emitter Breakdown Voltage: 600 V
- Transistor Case Style: ISOTOP
- Case Style: ISOTOP
- Current Temperature: 25°C
- Fall Time Tf: 660 ns
- Full Power Rating Temperature: 25°C
- Max Current Ic Continuous a: 200 A
- Number of Transistors: 1
- Power Dissipation: 630 W
- Power Dissipation Pd: 630 W
- Pulsed Current Icm: 400 A
- Rise Time: 60 ns
- Termination Type: Through Hole
- Transistor Polarity: N
- Voltage Vces: 600 V
RoHS: Yes
Accessories:
- Nettlefolds - MB04040010007FA
- Torqueleader - 015600