Datasheet BUP313D - Infineon IGBT, TO-218 — Ficha de datos

Descripción detallada

Manufacturer: Infineon

Description: IGBT, TO-218

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Docket:
Infineon
IGBT With Antiparallel Diode
BUP 313D
Preliminary data
· Low forward voltage drop · High switching speed · Low tail current · Latch-up free · Including fast free-wheel diode Pin 1 G Type BUP 313D Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V Pin 2 C Ordering Code Q67040-A4228 Pin 3 E

Specifications:

• Transistor Type: IGBT
• Max Voltage Vce Sat: 3.2 V
• Max Power Dissipation: 200 W
• Collector-to-Emitter Breakdown Voltage: 1200 V
• Transistor Case Style: TO-218AB
• Number of Pins: 3
• SVHC: Cobalt dichloride (18-Jun-2010)
• Av Current If: 18 A
• Case Style: TO-218AB
• Current Ic @ Vce Sat: 15 A
• Current Temperature: 25°C
• Lead Spacing: 2.54mm
• Max Current Ic Continuous a: 32 A
• Max Junction Temperature Tj: 150°C
• Max Power Dissipation Ptot: 200 W
• Min Junction Temperature, Tj: -55°C
• Number of Transistors: 1
• Pin Format: 1G, 2C, 3E
• Power Dissipation: 200 W
• Power Dissipation Pd: 200 W
• Pulsed Current Icm: 64 A
• Rise Time: 45 ns
• Termination Type: Through Hole
• Transistor Polarity: N
• Voltage Vces: 1200 V

RoHS: Yes

Accessories:

• Dow Corning - 2265931
• Fischer Elektronik - FK 243 MI 247 H
• Fischer Elektronik - FK 243 MI 247 O
• Fischer Elektronik - SK 145/25 STS-220
• Fischer Elektronik - WLK 5