Datasheet SKW25N120 - Infineon IGBT, FAST — Ficha de datos

Infineon SKW25N120

Part Number: SKW25N120

Descripción detallada

Manufacturer: Infineon

Description: IGBT, FAST

Docket:
SKW25N120
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
· 40lower Eoff compared to previous generation · Short circuit withstand time 10 µs · Designed for: - Motor controls - Inverter G - SMPS · NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability · Pb-free lead plating; RoHS compliant 1 · Qualified according to JEDEC for target applications · Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SKW25N120 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, wavesoldering, 1.6mm (

Specifications:

Transistor Type: IGBT
DC Collector Current: 46 A
Collector Emitter Voltage Vces: 3.6 V
Power Dissipation Max: 313 W
Collector Emitter Voltage V(br)ceo: 1200 V
Transistor Case Style: TO-247AC
Number of Pins: 3
Current Ic @ Vce Sat: 25 A
Current Ic Continuous a Max: 46 A
Current Temperature: 25°C
Device Marking: SKW25N120
Fall Time tf: 39 ns
Full Power Rating Temperature: 25°C
Junction Temperature Tj Max: 150°C
Junction Temperature Tj Min: -55°C
Package / Case: TO-247AC
Power Dissipation: 313 W
Power Dissipation Pd: 313 W
Power Dissipation Ptot Max: 313 W
Pulsed Current Icm: 84 A
Rise Time: 40 ns
Termination Type: Through Hole
Transistor Polarity: N
Voltage Vces: 1200 V

RoHS: Yes

Accessories:

Fischer Elektronik - WLK 5