isc N-Channel MOSFET Transistor 2SK1940-01 DESCRIPTION Drain Current –ID= 12A@ TC=25℃ Drain Source Voltage: VDSS= 600V(Min) Fast Switching Speed Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS Switching regulator UPS DC-DC converters General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 12 A IDM Drain Current-Single Plused 48 A Ptot Total Dissipation@TC=25℃ 125 W Max. Operating Junction Temperature 150 ℃ -55~150 ℃ Tj
Tstg Storage Temperature Range THERMAL CHARACTERISTICS
SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case Rth j-a Thermal Resistance, Junction to Ambient isc website：www.iscsemi.com MAX UNIT 1.25 ℃/W 35 ℃/W 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor 2SK1940-01 ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL
V(BR)DSS PARAMETER CONDITIONS MIN Drain-Source Breakdown Voltage VGS= 0; ID= 1mA 600 VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA 2.5 RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 6A IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 600V; VGS= 0 VSD Forward On-Voltage IS=24A; VGS=0 Gfs Forward Transconductance VDS= 25V；ID=6A tr
ton
tf
toff Rise time
Turn-on time
Fall time VGS=10V;ID=6A;
VDD=300V;
RL=10Ω Turn-off time isc website：www.iscsemi.com 2 TYPE MAX UNIT
V 10 3.5 V 0.75 Ω ±100 nA 500 µA 1.58 V 6.0 S
60 90 30 45
ns 80 120 140 210 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor 2SK1940-01 NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which …