Datasheet Vishay IRF510PbF-BE3 — Ficha de datos

IRF510
www.vishay.com Vishay Siliconix Power MOSFET
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• TO-220AB G G D S N-Channel MOSFET Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details PRODUCT SUMMARY
VDS (V) 100 RDS(on) (Ω) VGS = 10 V
8.3 Qgs (nC) 2.3 Qgd (nC) DESCRIPTION 0.54 Qg max. (nC) Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry. 3.8 Configuration Dynamic dV/dt rating …