eGaN® FET DATASHEET EPC2305 EPC2305 – Enhancement Mode Power Transistor
D VDS , 150 V
RDS(on) , 2.2 mΩ typ ary in
Prelim G EFFICIENT POWER CONVERSION
S HAL The EPC2305 is a 150 V eGaN® power transistor in a low inductance 3 x 5 mm QFN package with
exposed top for excellent thermal management.
The thermal resistance to case top is ~0.2 °C/W, resulting in excellent thermal behavior and easy
cooling. The device features an enhanced PQFN “Thermal-Max” package. The exposed top enhances
top-side thermal management and the side-wettable flanks guarantee that the complete side-pad
surface is wetted with solder during the reflow soldering process, which protects the copper and
allows soldering to occur on this external flank area for easy optical inspection.
mm2 Compared to a Si MOSFET, the footprint of 15
is less than half of the size of the best-in-class
Si MOSFET with similar RDS(on) and voltage rating, QG and QGD are significantly smaller and QRR is 0.
This results in lower switching losses and lower gate driver losses. In summary, EPC2305 allows the
highest power density due to enhanced efficiency, smaller size, and higher switching frequency for
smaller inductor and fewer capacitors.
The EPC2305 enables designers to improve efficiency and save space. The excellent thermal behavior
enables easier and lower cost cooling. The ultra-low capacitance and zero reverse recovery of the
eGaN® FET enables efficient operation in many topologies. Performance is further enhanced due to
the small, low inductance footprint.
Application Notes: Questions: • Easy-to-use and reliable gate, Gate Drive ON = 5 V typical,
OFF = 0 V (negative voltage not needed) …