Datasheet ON Semiconductor BSS123−G — Ficha de datos

DATA SHEET
www.onsemi.com N-Channel Logic Level
Enhancement Mode Field
Effect Transistor D G BSS123 S General Description These N−Channel enhancement mode field effect transistors are
produced using onsemi’s proprietary, high cell density, DMOS
technology. These products have been designed to minimize on−state
resistance while provide rugged, reliable, and fast switching
performance. These products are particularly suited for low voltage,
low current applications such as small servo motor control, power
MOSFET gate drivers, and other switching applications. SOT−23−3
CASE 318−08 MARKING DIAGRAM
3
Drain Features • 0.17 A, 100 V RDS(on) = 6 @ VGS = 10 V
RDS(on) = 10 @ VGS = 4.5 V
High Density Cell Design for Extremely Low RDS(on)
Rugged and Reliable
Compact Industry Standard SOT−23 Surface Mount Package
This Device is Pb−Free and Halogen Free SAMG
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Gate …