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N-Channel 200 V (D-S) 175 °C MOSFET
Extracto del documento
SUD19N20-90
Vishay Siliconix N-Channel 200 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY
VDS (V)
200 RDS(on) () ID (A) 0.090 at VGS = 10 V 19 0.105 at VGS = 6 V 17.5 •
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• TrenchFET® Power MOSFET
175 °C Junction Temperature
PWM Optimized
100 % Rg Tested
Compliant to RoHS Directive 2002/95/EC APPLICATIONS
• Primary Side Switch
TO-252
D G Drain Connected to Tab
G D S Top View
S Ordering Information: N-Channel MOSFET SUD19N20-90-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Symbol Limit Drain-Source Voltage VDS 200 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C)b TC = 25 °C
TC = 125 °C Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation L = 0.1 mH …