eGaN® FET DATASHEET EPC2302 EPC2302 – Enhancement Mode Power Transistor
VDS , 100 V
RDS(on) , 1.8 mΩ max Y NAR
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G EFFICIENT POWER CONVERSION P S HAL The EPC2302 is a 1.8 mΩ max RDS(on), 100 V eGaN® power transistor in a low inductance 3 x 5 mm QFN
package with exposed top for excellent thermal management. It is tailored to high frequency DC-DC
applications to/from 40 V–60 V and 48 V BLDC motor drives.
The thermal resistance to case top is ~0.2 °C/W, resulting in excellent thermal behavior and easy
cooling. The device features an enhanced PQFN “Thermal-Max” package. The exposed top enhances
top-side thermal management and the side-wettable flanks guarantee that the complete side-pad
surface is wetted with solder during the reflow soldering process, which protects the copper and
allows soldering to occur on this external flank area for easy optical inspection.
Compared to a Si MOSFET, the footprint of 15 mm2 is less than half of the size of the best-in-class Si
MOSFET with similar Rds(on) and voltage rating, QG and QGD are significantly smaller and QRR is 0.
This results in lower switching losses and lower gate driver losses. Moreover, EPC2302 is very fast
and can operate with deadtime less than 10 ns for higher efficiency and QRR = 0 is a big advantage
for reliability and EMI. In summary, EPC2302 allows the highest power density due to enhanced
efficiency, smaller size, and higher switching frequency for smaller inductor and fewer capacitors.
The EPC2302 enables designers to improve efficiency and save space. The excellent thermal behavior
enables easier and lower cost cooling. The ultra-low capacitance and zero reverse recovery of the …
