BF909; BF909R
N-channel dual gate MOS-FETs
Rev. 02 — 19 November 2007 Product data sheet IMPORTANT NOTICE
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NXP Semiconductors NXP Semiconductors Product specification N-channel dual gate MOS-FETs transistor consists of an amplifier MOS-FET with source
and substrate interconnected and an internal bias circuit to
ensure good cross-modulation performance during AGC. FEATURES
• Specially designed for use at 5 V supply voltage
…
