Datasheet ON Semiconductor TIP126 — Ficha de datos

TIP120, TIP121, TIP122
(NPN); TIP125, TIP126,
TIP127 (PNP)
Plastic Medium-Power
Complementary Silicon
Transistors www.onsemi.com Designed for general−purpose amplifier and low−speed switching
applications.
Features • High DC Current Gain − = 2500 (Typ) @ IC
= 4.0 Adc
Collector−Emitter Sustaining Voltage − @ 100 mAdc
VCEO(sus) = 60 Vdc (Min) − TIP120, TIP125
= 80 Vdc (Min) − TIP121, TIP126
= 100 Vdc (Min) − TIP122, TIP127
Low Collector−Emitter Saturation Voltage −
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
= 4.0 Vdc (Max) @ IC = 5.0 Adc
Monolithic Construction with Built−In Base−Emitter Shunt Resistors
Pb−Free Packages are Available*
hFE • •
•
• DARLINGTON
5 AMPERE
COMPLEMENTARY SILICON …

TIP125 / TIP126 / TIP127
PNP Epitaxial Darlington Transistor
Equivalent Circuit Features C • Medium Power Linear Switching Applications
• Complementary to TIP120 / TIP121 / TIP122 B TO-220 1 R1 1.Base 2.Collector 3.Emitter R2 R1 ≅ 8kΩ
R2 ≅ 0.12kΩ E Ordering Information
Part Number Top Mark Package Packing Method TIP125 TIP125 TO-220 3L (Single Gauge) Bulk TIP125TU TIP125 TO-220 3L (Single Gauge) Rail TIP126 TIP126 TO-220 3L (Single Gauge) Bulk TIP126TU TIP126 TO-220 3L (Single Gauge) Rail TIP127 TIP127 TO-220 3L (Single Gauge) Bulk TIP127TU TIP127 TO-220 3L (Single Gauge) Rail Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted. Symbol
VCBO Parameter Value Collector-Base Voltage TIP125 -60 TIP126 -80 TIP127 -100 TIP125 -60 TIP126 -80 TIP127 -100 Unit
V VCEO Collector-Emitter Voltage V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -5 A ICP Collector Current (Pulse) -8 A IB Base Current (DC) -120 mA TJ Junction Temperature 150 °C -65 to 150 °C TSTG Storage Temperature Range © 2001 Fairchild Semiconductor Corporation
TIP125 / TIP126 / TIP127 Rev. 1.1.0 www.fairchildsemi.com
1 TIP125 / TIP126 / TIP127 — PNP Epitaxial Darlington Transistor November 2014 Values are at TC = 25°C unless otherwise noted. Symbol
PC Parameter Value Collector Dissipation (TA = 25°C) 2 Collector Dissipation (TC = 25°C) 65 Unit
W Electrical Characteristics
Values are at TC = 25°C unless otherwise noted. Symbol Parameter Conditions
TIP125 VCEO(sus) ICEO Collector-Emitter Sustaining
TIP126
Voltage
TIP127
Collector Cut-Off Current ICBO Collector Cut-Off Current IEBO Emitter Cut-Off Current hFE DC Current Gain(1) Max. Unit -60
IC = -100 mA, IB = 0 -80 V -100 TIP125 VCE = -30 V, IB = 0 -2 TIP126 VCE = -40 V, IB = 0 -2 TIP127 VCE = -50 V, IB = 0 -2 TIP125 VCB = -60 V, IE = 0 -1 TIP126 VCB = -80 V, IE = 0 -1 TIP127 VCB = -100 V, IE = 0 -1 VEB = -5 V, IC = 0 -2 VCE = -3 V, IC = -0.5 A 1000 VCE = -3 V, IC = -3 A 1000 mA mA
mA IC = -3 A, IB = -12 mA -2 IC = -5 A, IB = -20 mA -4 Base-Emitter On Voltage(1) VCE = -3 V, IC = -3 A -2.5 V Output Capacitance VCB = -10 V, IE = 0,
f = 0.1 MHz 300 pF VCE(sat) Collector-Emitter Saturation Voltage(1) VBE(on) …