Datasheet Analog Devices HMC7441-SX — Ficha de datos

HMC7441
v00.0913 AMPLIFIERS -LINEAR & POWER -CHIP GaAs pHEMT MMIC 2 WATT
POWER AMPLIFIER, 27.5 -31 GHz
Typical Applications Features The HMC7441 is ideal for: Saturated Output Power: +34 dBm @ 25% PAE • Point-to-Point Radios High Output IP3: +38 dBm • Point-to-Multi-Point Radios High Gain: 23 dB • VSAT & SATCOM DC Supply: +6V @ 1000 mA • Military & Space No External Matching Required
Die Size: 3.18 x 2.84 x 0.1 mm Functional Diagram General Description
The HMC7441 is a three-stage GaAs pHEMT Power
Amplifier which operates between 27.5 and 31 GHz.
The amplifier provides 23 dB of gain and +34 dBm
of saturated output power at 25% PAE from a 6V
supply. With an excellent output IP3 of +38 dBm, the
HMC7441 is ideal for linear application such as Kaband VSAT or high capacity point-to-point or pointto-multi-point radios demanding +34 dBm of efficient
saturated output power. The RF I/Os are DC blocked
and matched to 50 Ohms for ease of integration
into Multi-Chip-Modules (MCMs). All data is taken
with the chip in a 50 Ohm test fixture connected via
(1) 0.025mm (1 mil) diameter wire bonds of 0.31 mm
(12 mil) length. Electrical Specifications, TA = +25° C
Vdd = Vdd1, Vdd2, Vdd3, Vdd4, Vdd5 = +6V, Idd = 1000 mA [1]
Parameter Min. Frequency Range
Gain 20 Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB) Typ. …