Datasheet Analog Devices HMC1040LP3CETR — Ficha de datos

HMC1040LP3CE
v00.0112 Amplifiers -Low Noise -SMT GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 24 -43.5 GHz
Typical Applications Features This HMC1040LP3BE is ideal for: Low Noise Figure: 2.2 dB • Point-to-Point Radios High Gain: 23 dB • Test Instrumentation P1dB Output Power: +12 dBm • SatCom Transponders & VSAT Single Supply: +2.5V @ 70 mA • Industrial Sensors Output IP3: +22 dBm • EW & ECM Subsystems 50 Ohm Matched Input/Output
16 Lead 3x3 mm SMT Package: 16mm² General Description Functional Diagram The HMC1040LP3CE is a self-biased GaAs MMIC
Low Noise Amplifier housed in a leadless 3x3 mm
plastic surface mount package. The amplifier operates
between 24 and 43.5 GHz, delivering 23 dB of small
signal gain, 2.2 dB noise figure, and output IP3 of +22
dBm, while requiring only 70 mA from a +2.5 V supply.
The P1dB output power of +12 dBm enables the LNA to
function as a LO driver for many of Hittite’s balanced, I/Q
and image reject mixers. The HMC1040LP3CE features I/Os that are DC blocked and internally matched to 50 Ohms, and is ideal for high capacity
microwave radios and VSAT applications. Electrical Specifications, TA = +25° C, Vdd1 = Vdd2 = Vdd3 = +2.5V, Idd = 70 mA
Parameter Min. Frequency Range
Gain [1] Gain Variation over Temperature
Noise Figure [1] Typ. Max. Min. 24 -27.5
22 25 20 0.022
2.7 Typ. Max. Min. 27.5 -33.5
23 17 0.021
3.2 2.2 Typ. Max. 33.5 -43.5 2.7 Units
GHz 20 dB 0.021 dB /°C 2.7 3.2 dB Input Return Loss 11 12 10 dB Output Return Loss 16 13 10 dB Output Power for 1 dB Compression 12 12 12 dBm Saturated Output Power (Psat) 14 14 14 dBm Output Third Order Intercept (IP3) 22 22 24 dBm Supply Current (Idd)
(Vdd = 2.5V) 70 85 70 85 70 85 mA [1] Board loss subtracted out. 1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no …